Transistor at High Frequencies | BJT High Frequency Analysis | Engineering Essentials

In this video, Er. Anand solves problems based on the h-parameter model, a powerful linear approximation technique for small-signal transistor analysis. Learn how to derive input impedance, output admittance, current gain, and voltage gain of BJTs using hybrid parameters.

Transistor at High Frequencies | BJT High Frequency Analysis | Engineering Essentials

https://www.youtube.com/@EngineeringEssentials-ErAnand

Description

Welcome to Engineering Essentials’ Analog Electronics! In this video, Er. Anand dives deep into the high frequency behaviour of the Bipolar Junction Transistor (BJT). Using the hybrid parameter (h ) model, he walks you step by step through:

• The impact of internal capacitances and parasitic elements on BJT performance at RF and microwave bands

• Derivation of h parameters (h_ie, h_fe, h_re, h_oe) for small signal high frequency analysis

• Calculation of cutoff frequency (f_T) and its significance in amplifier design

• Several worked out numerical examples to reinforce concepts and calculation techniques

This tutorial is tailored for undergraduate engineering students from top institutions worldwide—whether you’re at IIT, NIT, MIT, or any university course on Basic Electronics, Analog Electronics, or Semiconductor Physics. By the end of this session, you’ll have a clear understanding of how to model and predict BJT behavior in high speed circuits.

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Brief Technical Term Glossary

• BJT (Bipolar Junction Transistor): A three layer semiconductor device (emitter, base, collector) used for amplification and switching.

• High Frequency Response: The behavior of electronic components when operated at frequencies where parasitic capacitances and transit times become significant.

• h Model (Hybrid Parameter Model): A small signal equivalent circuit using h parameters (input impedance h_ie, forward gain h_fe, reverse voltage gain h_re, output admittance h_oe) to analyze transistor behavior.

• Cutoff Frequency (f_T): The frequency at which the current gain of a transistor falls to unity; a key metric for RF and high speed amplifier design.

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Thought for a couple of seconds

• analog circuit design

•high speed transistors

• RF electronics tutorial

• BJT small signal model

• transistor biasing at MHz

• semiconductor device physics

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• microelectronics fundamentals

• transistor frequency limits

• emitter base capacitance

• input/output impedance

• high frequency amplifier design

• RF amplifier analysis

• transistor parameter extraction

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